Nonlinear circuit optimization with dynamically integrated physical and device models

The approach used, which is directed at the next-generation tools for yield optimization, dynamically integrates physics-based device models. The FET model of M.A. Khatibzadeh and R.J. Trew (IEEE Trans. Microwave Theory Tech., vol.36, p.231-8, 1988) is treated in a novel formulation of harmonic balance simulation. Adjoint sensitivity analysis allows efficient optimization of parameters such as device dimensions, material-related parameters, doping profile, channel thickness, etc. Parameter extraction extraction and power amplifier design are demonstrated.<>