In-Situ Ultrafast Sensing Techniques for Prognostics and Protection of SiC Devices

Embedding diagnostic and prognostic into power electronics has the potential to increase the reliability and resiliency of and increasing automated adaptability in variable operating conditions has increased the reliability and resiliency of these systems, especially with the transition to wide bandgap semiconductors where higher voltages, lower on-state resistances, and faster switching speed can lead to rapid failures under conditions such as shoot through. This value proposition requires minimally invasive sensing elements that provide real-time monitoring of online system operations such that parasitic values are not introduced, which erode performance. Presented is an insitu current sensing circuit with integration to the controller to provide enhanced operational capabilities such as sub-microsecond short circuit protection and power semiconductor device on-state resistance measurement. Techniques developed for measurement and protection are not limited to the tested SiC devices and may be extended to numerous types of critical components. These techniques can provide detailed, real-time state of health estimation for critical components and system capabilities, thus, enhancing system reliability.