Thin, Radiation-Resilient III-V PV Devices Utilizing Quantum Structures and Epitaxial Light Reflectors

To improve BOL performance with EOL degradation in mind, nip InGaP-GaAs Heterojunction PV devices were grown and tested investigating a variety of epitaxial designs. Various numbers of quantum wells were added i-region, ranging from 6-45x in combination with a distributed Bragg reflector to promote additional current production at and beyond the GaAs band-edge. Utilizing the extra current production from the wells, the GaAs base was thinned from an optically thick 2,680 nm to 1,500 nm to prepare the devices for radiation-induced minority carrier lifetime degradation. Under AM0, the 45xSBQWs with a 1,500 nm base increased Jsc by 1.3mA/cm2 compared to the optically thick GaAs device containing 0xQW, as well as maintaining a Voc within 8mV.