Synthesis of Diamond-Like Arsenolite Crystallites on Surface of Gallium Arsenide

The oxidation method of the surface of the gallium arsenide has been demonstrated by us. If semiconductor surfaces are naturally oxidized, inhomogeneity, amorphousness and multicomponent of oxide coatings are observed. The method demonstrated by us, namely electrochemical etching of GaAs with subsequent electrochemical deposition, allows to form the diamond-like crystallites of the arsenic trioxide on the semiconductor surface in the cubic phase of the arsenolite. Such crystallites have the shape of regular dipyramids with triangular faces (tetrahedron). Morphological, chemical and structural characteristics of the formed layers were studied by SEM, EDX, Raman-spectroscopy methods.