A simulation study of FET-based nanoelectrodes for active intracellular neural recordings

Active FET-based nanoelectrodes are promising candidates to serve as sensors for neural signal recording. Based on a multiscale-multiphysics TCAD modelling framework, we study the interaction of two representative nanoelectrode archi-tectures in intracellular contact with neurons. The methodology is explained, and DC, AC, and transient simulations are exten-sively used to compare the main performance metrics of the proposed structures. The lateral coating of the nanoelectrode results to be a key-parameter to control the sensor performance.