Simulation Study of Novel Charge-Plasma Based ArcTFET for Sensing the Breast Cancer Biomarker (C-erbB-2) in Serum

In this work, a novel design of ArcTFET based on Charge-Plasma and Gate-Stack (CP-GS-ArcTFET) is proposed for the first time. The precise detection of breast cancer biomarker (C-erbB-2) through serum should not be limited by HEMT devices but should be explored with other novel devices also. In this regard, investigation in above-mentioned device is carried out for the detection of C-erbB-2 protein. In CP-GS-ArcTFET, various central angles (
$\theta $
) are considered for observing the electrical parameters e.g., drain current (
$\text{I}_{\text {d}}$
), threshold voltage (
$\text{V}_{\text {T}}$
), and subthreshold slope (SS). The transconductance (
$\text{g}_{\text {m}}$
), its derivatives (
$\text{g}_{\text {m2}}$
and
$\text{g}_{\text {m3}}$
), and analog performance indicators such as cut-off-frequency (
$\text{f}_{\text {T}}$
), gain-bandwidth-product (GBP), intrinsic-device-delay (
$\tau $
), and transconductance-frequency-product (TFP) have also been analysed for these
$\theta \text{s}$
. The drain current, SS, and
$\text{V}_{\text {T}}$
has been improved with the central angles. In the proposed device, the concept of charge equivalence of C-erbB-2 with its quantities (in
$\mu \text{g}$
/ml) is used for analysing sensitivity in Silvaco ATLAS TCAD. The device sensing is observed by changing C-erbB-2 concentrations in serum. The sensitivity concerning ON-current, OFF-current and current-ratio has been addressed for healthy and diseased individuals. The impact of
$\theta $
on sensitivity is also observed. With increasing
$\theta $
, the sensitivities
$\text{S}_{\text {ON}}$
and
$\text{S}_{\text {OFF}}$
decrease; whereas, the sensitivity
$\text{S}_{\text {current ratio}}$
increases for the C-erbB-2 concentration of
$210 \mu \text{g}$
/ml. The
$\text{I}_{\text {ON}}/\text{I}_{\text {OFF}}$
and SS in CP-GS-ArcTFET are
${4.5} \times {10}^{{9}}$
and 35.97 mV/decade, respectively. The capability of CP-GS-ArcTFET to boost the performance is established with the decrease in leakage, enhancing
$\text{I}_{\text {ON}}/\text{I}_{\text {OFF}}$
, steeper SS with the aids of
$\text{V}_{\text {T}}$
reduction.