Effect of Wafers Processing by Low Doses $\gamma$-Radiation on the Structure of Porous Layers GaAs

The results of the study of the structure of gallium arsenide wafers and porous layers GaAs by high-resolution X-ray diffraction (XRD) are discussed. The wafers GaAs were previously subjected to treatment with low doses of y-irradiation (10, 30, 40, 200 kR). Porous layers GaAs by electrochemical etching in galvanostatic mode were obtained. The morphology of the surface and the end chips of porous layers by scanning electron microscopy (SEM) were studied. The diffraction patterns made it possible to determine the change in the crystallographic parameters of the substrates and porous layers GaAs as a function of the irradiation dose of the wafers.