Measuring Complex for Photoelectric Diagnostics of Semiconductor Structures

The paper presents a block diagram and describes the principle of operation of a measuring complex for photoelectric diagnostics of semiconductor structures with local photoexcitation. The complex allows scanning the working surface of a semiconductor structure with laser radiation, as well as detecting recombination radiation from the surface of a semiconductor structure in the near infrared wavelength region. The results of experimental tests of the complex on a four-quadrant photodiode are presented. The degree of inhomogeneity of the photoresponse can be used to assess the quality of the structure under study and the spread in the sensitivity of the elements of the photodiode under study.