Characterization of Si-IGBT Crosstalk with a Concentration on Power Circuit Parasitic Elements and the Device Operation Point

Crosstalk is a serious issue in power electronics converters having a phase-leg in their structure. The crosstalk destructive effect can lead to failure of the device. Hence, several models are presented in the literature to analyze the crosstalk and prevent the undesired failures. However, these models need to be enhanced so as to be characterized in different aspects. In this paper, a new comprehensive model based on the last models in state-of-art has been presented. This model includes the parasitic elements of the power circuit and parasitic capacitances of Si-IGBT. Thus, the effect of variable elements can be investigated. In this paper, the effect of the high-side switch specifications such as off-sate voltage, conducting current, and turning-on time on the crosstalk has been figured out. It is found that the most critical condition in terms of the crosstalk is when the converter operates on the high voltage levels of DC-bus and light-load conditions. Moreover, the different values of parasitic inductance are considered in the model, and their effect on the crosstalk is evaluated. Furthermore, the experimental setup has been introduced in order to check the model accuracy. In order to study the effect of Si-IGBT parasitic capacitances, the ratio of
$C_{\text{GC}}/C_{\text{GE}}$
has been changed, and results have been presented. The case study device for the investigation of the crosstalk and experimental tests is IXGH60N60.