Implementation of onsite Junction Temperature Estimation for a SiC MOSFET Module for Condition Monitoring

This paper presents an advanced methodology for mapping junction temperature (
$T_{j}$
) based on the drain to source resistance (
$R_{ds,\text{on}}$
) of a SiC MOSFET module to monitor the power electronics converter health condition. Capturing real-time measurement of on-state drain-source voltage (
$V_{ds, on}$
), drain-source current (
$I_{ds, on}$
) and baseplate temperature, and taking advantage of a fast edge computing device, a significant correlation can be established between
$T_{j}$
and
$R_{ds,\text{on}}$
. Due to having a linear correlation and simple circuity in comparison to other junction temperature estimation methods, e.g., the internal gate resistance method (
$R_{Gint}$
), gate threshold voltage method (
$V_{g, th}$
) and short-circuit current method (
$I_{sc}$
), the output results of the proposed paper can be effortlessly implemented in a simple microcontroller that can monitor the health condition of a SiC MOSFET module in terms of bond wire fatigue and metallization reconstruction. To validate the proposed method, a synchronous boost converter is prototyped and tested. The experimental results depict the effectiveness of the proposed method.