Electrical and noise properties of graphene gate fin-shaped GaN/AlGaN field effect transistors for high frequency electronics

We report on the fabrication and study of graphene gate GaN/AlGaN fin-shaped field effect transistors. The investigated DC, noise, and sub-sub-THz properties indicate their prospective for transparent high-temperature GaN-based electronics. The dependence of graphene gate properties on the bias adds new functionality to these devices.