Integration of 3-Level MoS Multibridge Channel FET With 2D Layered Contact and Gate Dielectric

Multi-bridge channel field effect transistor (MBCFET) provides several advantages over FinFET technology and is an attractive solution for sub-5 nm technology nodes. MBCFET is a natural choice for devices that use semiconducting layered materials (such as, MoS2) as the channel due to their dangling-bond-free ultra-thin nature and the possibility of layer-by-layer transfer. MoS2-based MBCFET is thus an attractive proposition for drive current boost without compromising on the electrostatics and footprint. Here we demonstrate a 3-level MoS2 MBCFET, where each vertically stacked channel is dual-gated to achieve a saturation current of
$174.9~ \boldsymbol \mu \text{A}$
(which translates to
$90~ \boldsymbol \mu \text{A}$
per
$\boldsymbol \mu \text{m}$
footprint width (@
$2.7~ \boldsymbol \mu \text{m}$
channel length), a near-ideal sub-threshold slope of 63 mV/dec, and an on-off ratio lpzrptGreater108. This work sets the benchmark for layer-material-based MBCFET in terms of the number of parallel channels integrated, simultaneously providing high drive current and excellent electrostatic control.