Trench-Structured High-Current-Driving Aluminum-Doped Indium–Tin–Zinc Oxide Semiconductor Thin-Film Transistor

This letter presents a thin-film transistor architecture, in which a “trench” is introduced between the source and drain electrode to enhance current flow. The top-gate top-contact oxide Trench thin-film transistor has a superior on-current per width of
$27.7~\mu \text{A}/ \mu \text{m}$
at a drain voltage of 4.1 V. It also has a good subthreshold swing of 0.122 V/dec and turn-on voltage of −0.4 V. This study explores the operating mechanism of the high-current-driving Trench oxide thin-film transistor.