SiC & GaN Comparison for High Switching Frequency, High Efficiency 7 kW Boost Converter

This paper focuses on the impact of using SiC or GaN components on the performance of a 7 kW bidirectional boost converter. A comparison of 650 V SiC and Gan components commercially available is first realized. Then DC/DC prototypes were implemented and tested to compare their electrical performances. All prototypes use the same inductor and test set-up. Tests have been conducted at different switching frequencies to find an optimum for efficiency and power density. Similar high efficiencies were achieved with both GaN and SiC components. However, it is important to emphasize that the possibility to increase the switching frequency were very different for each WBG selected depending on the switching loss level as well as different overall thermal impedance due to different packaging.