A 3.6 kV Multi-Level SiC MOSFET Power Module with 3D Integrated Driver and Passive Components for Pulsed Load Applications

This paper presents the design, development and testing of a 3.6kV multi-level SiC MOSFET power module intended for pulsed load applications. The purpose is to extend the lifetime on system level by minimizing the junction temperature swing. To achieve this, the module incorporates heat spreaders to optimize the thermal performance on short timescales. The power and gate drive loops are minimized by the incorporation of 3D integrated gate drivers, snubbers and decoupling components. Novel inter- connection materials and techniques like silver sintering and copper core wire bonds are incorporated. The module outperforms a benchmark design based on a discrete semiconductor solution.