3.3 kV 800 A Next High Power Density Dual Si IGBT Module with High Power Cycle Durability

To meet market demands for longer power cycle durability, improvements to die attachment and wire bonding of the chip surface are being promoted. In this report, an improvement in power cycle durability, reaching up to twenty-five times latest Sn-based die attach methods, is confirmed by the application of sintered copper and improved Al wire bonding to the next generation standardized dual package with low inductance. By capitalizing on an increased junction operation of 175deg C to a 3.3 kV voltage class device, equipped with a low-loss side gate IGBT and high power cycle durability enabled, the ampere rating of a new Si IGBT module was confirmed to increase from 600 A to 800 A.