650-V and 1200-V SiC MOSFETs with Low RonA and Strong Reduction in Switching Losses

Toshiba’s third-generation silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) technology was initially developed for 3.3-kV class chips. That chip technology is adopted and optimized for 650-V and 1200-V class products. Compared with second-generation SiC MOSFETs released in 2019, RonA is reduced by 43% and Ron x Qgd is drastically reduced by 80%. In addition, Vth is designed at 4 V to ease gate driving and to prevent malfunctions due to high speed switching. Figure 1 shows a list of third-generation SiC MOSFETs in the 650- V and 1200-V classes that are scheduled for release. In addition, high reliability was realized by optimizing the gate process.