Study of Breakdown Voltage Improvement of High-Voltage NLDMOS in Width Direction

The impact factors of High-voltage NLDMOS Breakdown Voltage in width direction is studied in this paper. The Breakdown Voltage is improved by retracting gate poly into the body area which is high-voltage P-type well (HVPW) and adjusting the size and ratio of HVPW and deep N-type well (DNW). Finally the High-voltage NLDMOS Breakdown Voltage in width direction is improved by 10V in TCAD simulation.