Millimeter-Wave Rectifiers Using Proprietary Schottky Diodes: Diode Modeling and Rectifier Analysis

This paper investigates millimeter-wave rectifiers based on off-the-shelf Schottky diodes. A batch of MACOM MA4E1317 diodes were first measured. The dc IV ranges from -10 to 1 V, while the biased S-parameters were measured up to 50 GHz. For the first time, MA4E1317 was modeled based on S-parameters up to 50 GHz, which gives more accurate modeling for extrinsic parameters of a diode. Preliminary intrinsic and extrinsic diode parameters were reported here. Based on the parameters, the performance of rectifiers using MA4E1317 was analyzed by the contour map method. It is found that the extrinsic parameters greatly influence the rectifier performance, proving the significance of accurate diode modeling with high-frequency measurement data.