Semiconductor diode lasers for telecommunications

Summary form only given. A major area of research in semiconductor lasers for telecommunications is 1.3 /spl mu/m and 1.55 /spl mu/m vertical-cavity surface-emitting lasers (VCSELs). The current approaches include wafer fusion to combine distributed Bragg reflectors (DBR) with the active region, epitaxial growth of InGaAsN active layer on lattice-matched GaAs substrates, epitaxial growth of InAlAs/InGaAs latticed-matched to InP substrates, and epitaxial growth of GaAsSb heterostructures. This talk will emphasize the InGaAsN approach including the work on using Sb as a surfactant to improve the InGaAsN material. Recent results will be presented.