Investigation of temperature effects on electron transport in SiC using unique full band Monte Carlo simulation

We present a detailed full band Monte Carlo (MC) study of electron transport in 6H-SiC /spl perp/ to the c-axis with emphasis on the effect of temperature and the band structure at high fields. The empirical pseudopotential for 6H-SiC is used for the first time in the MC transport simulations. We find that as many as five conduction bands and the /spl Gamma/ valley make significant contributions to electron transport at high temperature and fields. Electron-phonon coupling constants are obtained for 6H-SiC by fitting to experimental temperature-dependent drift velocity for the first time.