Dual anode LIGBT on SOI substrates

The device characteristics of a new SOI LIGBT, called the Dual Anode LIGBT, were investigated by 2-dimensional numerical simulation. It was shown that the negative differential resistance regime was completely eliminated without an additional process step and mask. The forward voltage drop of the DA-LIGBT at a current density of 100 A/cm/sup 2/, was 30% lower than that of the conventional SSA-LIGBT. This is attributed to the path of the electron carriers under the cathode region. The turn-off speed of the DA-LIGT is about one order faster than that of the LIGBT. The proposed DA-LIGBT may be an attractive device for power integrated circuits.