Different Current Mirror Topologies at Multiple Technology Nodes: Performance Comparison and Parameters Extraction

In this paper, different current mirror topologies are realized and analyzed using MOSFET and FinFET devices and compared their parameters. The main aim is to seek the performance of FinFET in analog circuits. FinFET current mirrors are realized with the basic topologies i.e. Simple current mirror, Wilson current mirror, Improved Wilson current mirror, and Cascode current mirror along with 180 nm, 90 nm, 45 nm, and 18 nm technology nodes using the Cadence Virtuoso Simulation tool. FinFET current mirror achieves large output resistance of 293 M$\Omega$ in Cascode connection due to its small channel length at low current whereas a low compliance voltage of 0.5 V is obtained at 90 nm technology in Simple current mirror. While interestingly, mirroring accuracy is observed better in Simple current mirror structure and the percentage error ratio is found lowest in Cascode current mirror structure at 180 nm technology nodes.