Terahertz Metamaterial Sensor With Ultra-High Sensitivity and Tunability Based on Photosensitive Semiconductor GaAs

We proposed and demonstrated an ultra-high sensitive refractive index metamaterial sensor within terahertz region. The sensor consists of a gallium arsenide (GaAs) structure on the top, aluminum in the middle, and a polyimide as the bottom substrate. The simulation results show that such sensor has an absorption peak at 2.0 THz with the Q-factor up to 444. The sensor is very sensitive to the change of the refractive index (RI) of the surrounding medium. The metamaterial sensor with optimized structure has a sensitivity of 1.762 THz/RIU and a figure of merit (FoM) value of 392 RIU
⁻¹
, respectively. Meanwhile, both the absorption peak position and intensity of such metamaterial sensor could be adjustable. The proposed terahertz metamaterial sensor with such high sensitivity and easily tunable properties has broad application prospects in research fields including biomedical sensing, disease diagnosis, and also trace detection of hazardous substances.