Evaluation of MOS devices' total dose response using the isochronal annealing method

We irradiated and then annealed 4049 CMOS inverters from four different manufacturers using the isochronal annealing method. From one manufacturer to another, the experimental results show completely different device behavior during the annealing. From these results, the use of the isochronal annealing method to screen the devices on the basis of the failure risk is discussed. Moreover, we show how experimental isochronal annealing under bias can allow detection of the rebound effect in devices.