Design of a Single Gate Metal Oxide Semiconductor High Electron Mobility Transistor with a Cavity Under the Gate

This paper presents the impact of dielectric modulation on characteristics for an AlGaN/ GaN heterostructure using 2D Visual TCAD simulation. The paper presents the simulation of a Single Gate MOSHEMT with a cavity under the gate towards biomolecule detection using Visual TCAD to determine the sensitivity analysis. The maximum drain current and maximum transconductance of the Single gate MOSHEMT with HfO
2
as a gate dielectric is 6.66 $\mu$A/$\mu$m and 5.52 $\mu$S/$\mu$m, respectively. A threshold voltage, maximum drain current, and transconductance variation of 0.21 V, 0.67 $\mu$A/$\mu$m, and 0.33 $\mu$S/$\mu$m respectively have been found with Cholesterol Oxidase neutral biomolecule in the cavity, for the Single Gate with a cavity under the gate.