Measurement and simulation of IM distortion in high mobility transistors

This paper reports the characterisation of intermodulation (IM) distortion in high electron mobility transistors (HEMTs). The second- and third-order IM products in HEMT common-source amplifiers are measured and simulated comprehensively. The comparison of measured and simulated IM products as a function of gate-source voltage, drain-source voltage, input level as well as load impedance are reported. Excellent agreement between measurements and simulations is achieved.