A systematic approach to RTN parameter fitting based on the Maximum Current Fluctuation

This paper addresses the automated parameter extraction of Random Telegraph Noise (RTN) models in nanoscale field-effect transistors. Unlike conventional approaches based on complex extraction of current levels and timing of trapping/de-trapping events from individual defects in current traces, the proposed approach performs a simple processing of current traces. A smart optimization problem formulation allows getting distribution functions of the amplitude of the current shifts and of the number of active defects vs. time.