Development of SiGe materials and devices

This article reviews the development of investigations about SiGe materials and devices in Tsinghua University, China, which includes SiGe material growth, quality characterization of the SiGe material, and fabrication of SiGe devices. The growth technology of SiGe materials focuses on the UHVCVD tool, which was designed and built by our Institute. Latest achievements of SiGe material growth and SiGe device fabrication in Tsinghua University are reported. For example, the growth of strained SiGe films on Si, growth of relaxed SiGe buffered layers and tensile strained Si cap layers, processing of SiGe HBT, GeSi/Si HIP infrared detectors, SiGe HMOSFET etc, and Ge quantum dots grown by self-assembly technique, is introduced.