The impact of reverse tone (n+ & p+ implant) mask and its mis-alignment on salicidation process integration

This work is to analyze the impact of a reverse tone (n+ & p+ implant) mask and its misalignment on salicidation process integration. A misalignment of an n+ implant mask causes a p-tap area to receive an n+ implant that forms an n region inside the p-tap. During the normal chip operation, the n-well is connected to Vcc and the p-tap is grounded. The TiSi process enables the electrically connection (shorted) of an n-type region inside a p-tap area. This creates a potential leakage path between the n-type region inside the p-tap (Ground) and n-well (Vcc).