New intrinsic gettering process in Czochralski-silicon wafer

A new intrinsic gettering (IG) process was established in Czochralski-silicon (CZSi) wafer subjected to a one-step annealing sequence based on the interaction of interstitial oxygen with the defects induced by neutron irradiation. The defects in Czochralski silicon wafer can be controlled by neutron irradiation. When irradiation flux changes from 5/spl times/10/sup 17/ to 1.5/spl times/10/sup 18/ cm/sup -2/, combining with one-step high-temperature annealing procedure, the neutron irradiated wafers showed an excellent intrinsic gettering effect.