A high frequency, high power VDMOSFET

A high frequency high power n-channel VDMOSFET suitable for use in plasma generation, excitation, aural power amplifiers of the VHF television transmitters and FM broadcasting transmitters was designed and fabricated. Terraced gate structure and refractory molybdenum (Mo) gate electrodes are employed for reduction of gate-drain capacitance (Cgd) and gate series resistance. Parallel operation of the MOSFET has been successfully achieved to delivered output power of 450 W with 13.7 dB gain and 74% drain efficiency at V/sub DS/=50 V f=175 MHz, 600 /spl mu/s pulse width, 20% duty cycle. The output power of 700 W with 16.6 dB gain and 70% drain efficiency has been obtained at f=100 MHz under the same conditions.