Lateral P-channel IGBT on SOI with Double Top RESURF Layers for Emitter Follower Type Complementary IGBT

This study introduces a new simple double layers RESURF structure for lateral IGBT on SOI which can achieve good SOA and satisfy good switching characteristics in half bridge inverter consisting of an emitter follower type complementary lateral IGBT(EF-CLIGBT) on SOI without complicated dead time setting to avoid the penetration current. The study especially focuses on the improvement of SOA for a p-channel LIGBT due to the difficulty in securing sufficient SOA in comparison with an n-channel LIGBT. The proposed structure can achieve sufficient forward blocking voltage as well as switching characteristics by avoiding the channel pinch-off caused by the junction between the N top RESURF and the P-drift layer. As a result, it is verified that the EF-CLIGBT leg can operate the half bridge inverter successfully without the through current.