Development of reliable multi-chip power modules with parallel planar- and trench-gate SiC MOSFETs

SiC power devices are being increasingly deployed in pivotal domains of our society infrastructure (e.g., transportation, energy, medical), because they enable higher energy conversion efficiency and reduced volume and weight than Si ones. However, it is well acknowledged, that the packaging and validation methodologies developed for Si fall short of meeting the reliability targets in the case of SiC. Such awareness has already produced technological responses, in the form of novel interconnection and assembly solutions (e.g., sintering instead of soldering). However, two aspects still hinder the development of reliable SiC modules: first, SiC devices feature a much broader dispersion of their electro-thermal parameters; second, lifetime tests acceleration factors are reduced in the case of SiC devices. This paper aims to provide a contribution in the direction of developing innovative SiC-bespoke technology validation approaches, based on extensive experimental characterization of commercially available parts.