An IGCT Unified Simulation Model Based on the Electrical Model and Thermistor

Integrated gate commutated thyristor (IGCT) is the core device of a new fusion power supply for Comprehensive Research Facility for Fusion Technology (CRAFT), which is very important to establish an accurate, suitable, and effective device model. To establish a unified simulation model (USM) suitable, this article analyzes the process of carrier motion in the process of IGCT turning on and off. The structure of the electrical model and the calculation method of related parameters are obtained by fitting the mathematical equations. Using standard passive components, such as resistance, capacitance, inductance, and an accurate bipolar junction transistor (BJT) model, converting the physical model into the electrical model can be realized. At the same time, because the physical model contains temperature parameters, compared with the traditional IGCT model, this model combines the thermal model with the electrical model, which makes the model unified. In this article, the 4000-A/4500-V IGCT power device in ABB is taken as an example to verify the rationality of the electric-thermal model under different currents and temperatures through MATLAB/SIMULINK simulation and experimental test.