Numerical Simulation Of Defects Interface At Gase/CIGS Heterostructure Solar Cell

In this study, the numerical simulation of defects interface at GaSe/CIGS heterostructure solar cell have been simulated using SCAPS-1D tool. The presence of defects at interface has a major role to decide the photovoltaic parameter of the CIGS solar cell. The acceptor and donor type of defects have been considered at shallow and deep trap spatial interface location between GaSe/CIGS heterostructure to design a more practical solar cell. The performance parameters such as open circuit voltage (VOC), short circuit density (JSC), fill factor (FF) and power conversion efficiency(η)of the solar cell have been changed significantly including the interface defects. The reported power conversion efficiency (PCE) without interface defect is23.06% while considering the donor and acceptor defects at interface of GaSe/CIGS solar cell, the quantum efficiency decreases and calculated to 22.76 % and 17.23% respectively. These results predict that acceptor type defect has more adverse effects to deteriorate the performance of the GaSe/CIGS solar cell. Further, the performance parameters of GaSe/CIGS solar cell have been investigated for parasitic resistances and operating temperature considering the donor type defect at interface. The calculated value shows a good acceptance with the reported values by other researchers.