High-speed InP/InGaAs DHBTs with ballistic collector launcher structure

We demonstrate high-speed InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with significantly improved collector carrier transport. The proposed collector design scheme allows for using moderate collector thickness to achieve high f/sub max/ (/spl sim/300 GHz) while maintaining high f/sub T/ (/spl sim/200 GHz). The DHBTs will meet the demand of ultra-high-speed applications for both high f/sub T/ and high f/sub max/.