A new high-performance poly-Si TFT by simple excimer laser annealing on selectively floating a-Si layer

A new poly-Si TFT with a single grain-boundary has been fabricated by a simple ELA method which employs a selectively floating a-Si active layer. A thermally insulating air-gap between the floating a-Si and substrate successfully induces the lateral grain growth. Large lateral grains exceeding 4 /spl mu/m have been grown by a single laser irradiation with wide ELA process window. The proposed poly-Si TFT exhibits high mobility of 331 cm/sup 2//V sec due to the high-quality grains.