Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology

Noise and isolation play a crucial role in the design and integration of telecommunications circuits. This work explores noise considerations for integrated design, including NPN and CMOS broadband and 1/f noise and the efficacy of available isolation strategies. We illustrate these issues using new data from IBM's 120 GHz, 0.18 /spl mu/m SiGe BiCMOS, featuring 0.4 and 0.6 dB noise figures at 3 and 10 GHz.