Device simulation of generation-recombination noise under periodic large-signal conditions

The modulation of flicker (1/f or 1/f-like) noise is an important topic for RF communications, as it contributes to the stability of oscillators and the signal-to-noise ratio in mixers. For the first time, simulation results for trap-assisted generation-recombination (GR) noise under large-signal conditions are demonstrated for both a homogeneous resistor and a p/sup +/-n junction in a semiconductor device simulator using the harmonic balance and impedance field methods. It is believed that GR fluctuations are one mechanism which contributes to 1/f-like noise observed in semiconductor devices.