High thermal stability of poly-Si nodes with novel CrTiN/TiN double barrier layers for high-density ferroelectric memory applications

We propose a novel CrTiN/TiN double barrier layer technology for high-density COB structure applications. After furnace annealing at 800/spl deg/C for 30min, a 0.35/spl mu/m poly-Si contact test structure with the Pt/CrTiN/TiN layer was found to maintain ohmic behaviors and provide a resistance of about 1k/spl Omega/. In addition, these contact structures successfully exhibited long time thermal stability at 750/spl deg/C. The findings of this study suggest that the CrTiN/TiN double barrier layer method is suitable for the COB structure in order to realize high-density ferroelectric memory applications.