Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor

We propose a hybrid self-curing method based on the parasitic bipolar junction transistor (PBJT) inherent to metal-oxide-semiconductor field-effect transistor (MOSFET). The PBJT utilizes the positive feedback of impact ionization to flow a large current close to the channel, generating Joule heat. Unlike conventional self-curing methods, the PBJT-based self-curing recovers the damaged gate oxide along the lateral dimension of the entire channel. The effects of the hybrid curing are quantitatively verified by low-frequency noise spectroscopy and charge pumping method.