Deep Learning Approach to Modeling and Exploring Random Sources of Gate-All-Around Silicon Nanosheet MOSFETs

In this paper, for the first time, deep learning (DL) based artificial neural network (ANN) is applied to model the effects of various random variations: work function fluctuation, random dopant fluctuation, and interface trap fluctuation, on gate-all-around silicon nanosheet MOSFETs. The number of fluctuations for each source variation is used as input features and their effects on devices of interest are studied qualitatively and quantitatively. The key figures of merit (FoM) are also extracted accurately from the transfer characteristics, which shows the competency of the ANN model in the domain of device modeling.