Formation of porous Ga2O3/GaAs layers for electronic devices

The article presents a simple and cheap method to form a porous structure of Ga
2
O
3
/GaAs on the surface of monocrystalline gallium arsenide. It is shown that two-stage etching in the nitric acid solution leads to massive etching pits as well as small pores on the surface. Ethanol added to the electrolyte solution in the second stage enables to form a passivating Ga
2
O
3
layer. The obtained structures were investigated using SEM, EDX and Raman spectroscopy.