Electron-assisted switching in FeFETs: Memory window dynamics – retention – trapping mechanisms and correlation

We investigate the impact of charge-trapping on ferroelectric (FE) switching and its influence on memory window (MW) and retention of FeFET. Fabricated FinFETs with ferroelectric gate stack were used to study defects properties (within HZO), trapping/FE-switching interplay, and dynamics. Starting from the electronic-assisted nucleation of FE domains, we investigated the interface charging and degradation, as well as their impact on the polarization compensation, MW and stabilization of the retention. Finally, a balance between those competing processes was analyzed and a retention model of FeFET (capturing behavior over device’s lifetime) was developed.