Temporal Correlation Detection Based on 3D NAND Flash In-Memory Computing

The detection of temporal correlations among event-driven data streams is widely demanded in data-intensive applications such as edge computing. In this work, temporal correlation detection is enabled by the combination of 3D NAND flash and in-memory computing. Different from mathematical scheme by covariance matrix calculation, here the detection is implemented by exploiting the physical process of charge tunneling and accumulation. Thus the intrinsic charge-trapping dynamics in 3D NAND flash can be leveraged to perform in-memory computing. The computing results are stored and imprinted in the threshold voltages of the 3D NAND device array, enabling co-existence of computation and storage in the same devices. On this basis, the validation of temporal correlation detection further paves the way for 3D NAND application in high-level non-von Neumann computing.