Modeling of a Flyback Converter Controlled by an IGBT for Generating a High-Frequency Pulse Voltage

With the rapid development of semiconductor devices, researchers have proposed different types of high-frequency pulse voltage generators based on power electronic converters to meet the requirements of microorganism inactivation, water pollution purification, and piezoelectric and dielectric electroactive polymer drives. The transient modeling of these high-voltage converters aids in understanding the electrical characteristics of the devices and optimizing their performances. This article analyzes the electrical behavior of a semiconductor switching device (i.e., an insulated gate bipolar transistor) used during the switching transient of the converter and constructs an electromagnetic transient model of the flyback converter that considers both the parasitic elements and the ferromagnetic losses of the transformer. The accuracy of the proposed model is then verified by comparing calculation results obtained using the model with experimental measurement results.