Use of BiMOSFETs in modern radar transmitters

Many applications today require reliable and efficient switches that operate efficiently at high voltages. It is rare to find MOSFETS above 1000 VDC and their high R/sub DS/(on) make their operation at high voltages unattractive. BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Nonepitaxial construction and new fabrication processes involved in making BiMOSFETs are described. Many characteristics such as forward voltage drop, gate charge and switching times are shown with the help of curves. Taking into consideration their many advantages, some designs of power supplies for radar transmitters and pulse modulators using BiMOSFETs are presented here. Judicious selection of resonant mode ZVS/ZCS techniques, combined with current fed mode, yields power supplies with many attractive features and benefits for powering TWTs, klystrons and magnetrons. The same approach can be used for building high voltage power supplies for innumerable other applications.