Optoelectronic active element based on PbS/ZnSe heterostructure

Photoelectric characteristics of isotype n-n-heterostructure PbS/ZnSe grown by low-temperature (T/sub s/=540 K) MBE technique of lead sulfide thin films on monocrystalline ZnSe wafers are studied. Detailed examination of observed photoresponse and photoluminescence in wavelength range 0.4-4.8 /spl mu/m under temperatures 77-300 K has demonstrated that the space charge region localized at the interface plays the main part in the photo-properties of the structure.