High-frequency properties of an abrupt heterojunction diode

Steady state and high frequency transmittance of the potential barrier at the abrupt np/sup +/-heterojunction is investigated. A general method of simulation based on the one-electron tunnelling and the time-dependent Hamiltonian is presented. Numerical results are obtained for a model structure of the n-AlGaAs/p/sup +/-GaAs diode within the approximation of one and two energy quanta emission or absorption.